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AgSn[Bi1−xSbx]Se3: synthesis, structural characterization, and electrical behavior
| dc.contributor.author | Valencia-Gálvez, P. | |
| dc.contributor.author | Delgado, Daniela | |
| dc.contributor.author | López, María Luisa | |
| dc.contributor.author | Álvarez-Serrano, Inmaculada | |
| dc.contributor.author | Moris-López, Silvana | |
| dc.contributor.author | Galdámez, Antonio | |
| dc.date.accessioned | 2022-06-01T18:34:51Z | |
| dc.date.available | 2022-06-01T18:34:51Z | |
| dc.date.issued | 2021 | |
| dc.identifier.uri | http://repositorio.ucm.cl/handle/ucm/3796 | |
| dc.description.abstract | Herein, we report the synthesis, characterization, and electrical properties of lead-free AgSnm[Bi1−xSbx]Se2+m (m = 1, 2) selenides. Powder X-ray diffraction patterns and Rietveld refinement data revealed that these selenides consisted of phases related to NaCl-type crystal structure. The microstructures and morphologies of the selenides were investigated by backscattered scanning electron microscopy, energy-dispersive X-ray spectroscopy, and high-resolution transmission electron microscopy. The studied AgSnm[Bi1−xSbx]Se2+m systems exhibited typical p-type semiconductor behavior with a carrier concentration of approximately ~+1020 cm−3. The electrical conductivity of AgSnm[Bi1−xSbx]Se2+m decreased from ~3.0 to ~10−3 S·cm−1 at room temperature (RT) with an increase in m from 1 to 2, and the Seebeck coefficient increased almost linearly with increasing temperature. Furthermore, the Seebeck coefficient of AgSn[Bi1−xSbx]Se3 increased from ~+36 to +50 μV·K−1 with increasing Sb content (x) at RT, while its average value determined for AgSn2[Bi1−xSbx]Se4 was approximately ~+4.5 μV·K−1. | es_CL |
| dc.language.iso | en | es_CL |
| dc.rights | Atribución-NoComercial-SinDerivadas 3.0 Chile | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/cl/ | * |
| dc.source | Crystals, 11(8), 864 | es_CL |
| dc.subject | Selenides | es_CL |
| dc.subject | Seebeck coefficient | es_CL |
| dc.subject | Lead-free thermoelectric materials | es_CL |
| dc.title | AgSn[Bi1−xSbx]Se3: synthesis, structural characterization, and electrical behavior | es_CL |
| dc.type | Article | es_CL |
| dc.ucm.indexacion | Scopus | es_CL |
| dc.ucm.indexacion | Isi | es_CL |
| dc.ucm.uri | mdpi.com/2073-4352/11/8/864 | es_CL |
| dc.ucm.doi | doi.org/10.3390/cryst11080864 | es_CL |
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Excepto si se señala otra cosa, la licencia de la publicación se describe como Atribución-NoComercial-SinDerivadas 3.0 Chile