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dc.contributor.authorMoris-López, Silvana
dc.contributor.authorManríquez, Victor
dc.contributor.authorBarahona-Huenchumil, Patricia
dc.contributor.authorGaldámez, Antonio
dc.contributor.authorValencia-Gálvez, P.
dc.date.accessioned2022-10-11T20:38:08Z
dc.date.available2022-10-11T20:38:08Z
dc.date.issued2018
dc.identifier.urihttp://repositorio.ucm.cl/handle/ucm/4087
dc.description.abstractWe report the synthesis, characterization and electrical properties of Ag0.3Cu0.7InS2, Ag0.3Cu0.7InSe2 and Ag0.3Cu0.7InTe2. These solid solutions were synthesized via microwave-assisted solid-state reactions. Powder X-ray diffraction patterns were indexed in the space group 42σ. The chemical compositions were determined by scanning electron microcopy. The analysis of the vibrational properties was performed by Raman scattering measurements. The Raman peaks were analyzed by fitting the spectra and allowed the identification of the vibrational modes via comparison with experimental and theoretical data from CuInQ2 (Q = S, Se, Te) end-members. Ag0.3Cu0.7InS2 and Ag0.3Cu0.7InTe2 exhibit typical semiconductor p-type behavior with a carrier concentration of ~ +10¹⁶ cm⁻³. The electrical conductivities σ at R.T. were ~10⁻¹ S cm⁻¹ and ~1.0 S cm⁻¹ for Ag0.3Cu0.7InS2 and Ag0.3Cu0.7InTe2, respectively. The optical band gaps, based on the UV-Vis-NIR spectra, were Eg ~1.50 eV.es_CL
dc.language.isoenes_CL
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 Chile*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/cl/*
dc.sourceChalcogenide Letters, 15(12), 615-623es_CL
dc.subjectSemiconductor compoundes_CL
dc.subjectP-typees_CL
dc.subjectChalcopyrite-typees_CL
dc.titleElectrical and optical properties of p-type Ag0.3Cu0.7InQ2 chalcopyrite semiconductorses_CL
dc.typeArticlees_CL
dc.ucm.indexacionScopuses_CL
dc.ucm.indexacionIsies_CL
dc.ucm.urichalcogen.ro/615_MorisS.pdfes_CL


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Atribución-NoComercial-SinDerivadas 3.0 Chile
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